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Quantum Size-Dependent Third-Order Nonlinear Optical Susceptibility in Semiconductor Quantum Dots
引用本文:SUNTing XIONGGui-guang. Quantum Size-Dependent Third-Order Nonlinear Optical Susceptibility in Semiconductor Quantum Dots[J]. 武汉大学学报:自然科学英文版, 2005, 10(2): 389-392. DOI: 10.1007/BF02830673
作者姓名:SUNTing XIONGGui-guang
作者单位:SchoolofPhysicsandTechnology,WuhanUniversity,Wuhan430072,Hubei,China
基金项目:Supported by the Committee of Science and Tech nology of Wuhan(1320017010121)
摘    要:The density matrix approach has been employed to investigate the optical nonlinear polarization in a single semiconductor quantum dot(QD). Electron states are considered to be confined within a quantum dot with infinite potential barriers. It is shown, by numerical calculation, that the third-order nonlinear optical susceptibilities for a typical Si quantum dot is dependent on the quantum size of the quantum dot and the frequency of incident light.

关 键 词:量子论 非线性磁化系数 半导体 光学特性 哈密尔敦函数
收稿时间:2004-06-11

Quantum size-dependent third-order nonlinear optical susceptibility in semiconductor quantum dots
Sun Ting,Xiong Gui-guang. Quantum size-dependent third-order nonlinear optical susceptibility in semiconductor quantum dots[J]. Wuhan University Journal of Natural Sciences, 2005, 10(2): 389-392. DOI: 10.1007/BF02830673
Authors:Sun Ting  Xiong Gui-guang
Affiliation:(1) School of Physics and Technology, Wuhan University, 130072 Wuhan, Hubei, China
Abstract:The density matrix approach has been employed to investigate the optical nonlinear polarization in a single semiconductor quantum dot(QD). Electron states are considered to be confined within a quantum dot with infinite potential barriers. It is shown, by numerical calculation, that the third|order nonlinear optical susceptibilities for a typical Si quantum dot is dependent on the quantum size of the quantum dot and the frequency of incident light.
Keywords:cylindric quantum dot  nonlinear susceptibility  quantum size
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