| 退火温度对MnZn铁氧体薄膜性能的影响 |
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| 引用本文： | 史富荣,余忠,孙科,李金龙,李雪,兰中文.退火温度对MnZn铁氧体薄膜性能的影响[J].实验科学与技术,2011,9(2):22-25. |
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| 作者姓名： | 史富荣 余忠 孙科 李金龙 李雪 兰中文 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,成都,610054 |
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| 摘 要： | 采用射频磁控溅射法在Si(111)基片上沉积了MnZn铁氧体薄膜,用X射线衍射仪(XRD)分析薄膜的物相结构,用振动样品磁强计(VSM)测量薄膜面内饱和磁化强度Ms和矫顽力Hc。结果表明:随着退火温度的升高,MnZn铁氧体薄膜的X射线衍射峰强度逐渐增强,且主峰逐渐由(311)峰变为(222)峰,沿(111)面取向生长明显。薄膜的饱和磁化强度和矫顽力均随着退火温度的升高而升高。
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| 关 键 词： | MnZn铁氧体薄膜 射频磁控溅射 相结构 饱和磁化强度 矫顽力 |
Effect of Annealing Temperature on the Properties of MnZn Ferrite Thin Films |
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| SHI Fu-rong,YU Zhong,SUN Ke,LI Jin-long,LI Xue,LAN Zhong-wen.Effect of Annealing Temperature on the Properties of MnZn Ferrite Thin Films[J].Experiment Science & Technology,2011,9(2):22-25. |
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| Authors: | SHI Fu-rong YU Zhong SUN Ke LI Jin-long LI Xue LAN Zhong-wen |
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| Institution: | SHI Fu-rong,YU Zhong,SUN Ke,LI Jin-long,LI Xue,LAN Zhong-wen(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | MnZn ferrite films were deposited on Si(111)substrate by RF magnetron sputtering.The phase structure was characterized by using X-ray diffractometer(XRD).The in-plane saturation magnetization Ms and coercive force Hc of MnZn ferrite films were measured by vibrating sample magnetometer(VSM).The results showed that as the annealing temperature increased,the intensity of X-ray diffraction peaks enhanced.Simultaneously,the main peak(311)shifted to(222)peak gradually,and the films grew along the(111)plane orient... |
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| Keywords: | MnZn ferrite film RF magnetron sputtering phase structure saturation magnetization coercive force |
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