| 反应溅射中靶材成份对Si－Cr－Ni－O薄膜形成的XPS分析 |
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| 引用本文： | 王家敏,吴建生,毛大立.反应溅射中靶材成份对Si－Cr－Ni－O薄膜形成的XPS分析[J].上海交通大学学报,1995(3). |
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| 作者姓名： | 王家敏 吴建生 毛大立 |
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| 摘 要： | 本文用通氧反应溅射法制备了Ｓｉ－Ｃｒ－Ｎｉ－Ｏ薄膜，用ＡＥＳ和ＸＰＳ测定和分析了所制得的薄膜，发现靶村组份配比的改变将导致构成薄膜的化合物种类的改变，Ｓｉ含量的提高有阻碍Ｃｒ参与氧化的趋势，通氧量和热处理对薄膜的氧化起着一定的作用．
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| 关 键 词： | 反应溅射，靶材，薄膜 |
XPS Analysis of the Effect of the Target Composition on the Formation of Si-Cr-Ni-O Thin Films During Reactive Sputtering |
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| Wang Jiaming, Wu Jianshen, Mao Dali.XPS Analysis of the Effect of the Target Composition on the Formation of Si-Cr-Ni-O Thin Films During Reactive Sputtering[J].Journal of Shanghai Jiaotong University,1995(3). |
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| Authors: | Wang Jiaming Wu Jianshen Mao Dali |
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| Institution: | Wang Jiaming; Wu Jianshen; Mao Dali |
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| Abstract: | Si-Cr-Ni-O thin films were obtained by reactive sputtering with Ar+O2 gas mixture. The elemental composition ratio of the films made by different composition ratio targets and elemental bonding energy were determined by Auger electron spectroscope and Xray photoelectron spectroscopy. The experiment results indicated that the different ratio of the target composition can cause the change of elemental valance of the films. Increasing the ratio of St can defend Cr oxidation and oxygen partial pressure and thermal treatment will give rise to film layer oxidation. |
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| Keywords: | reactive sputtering target film |
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