| F_e~+注入Si中的研究 |
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| 引用本文： | 赵鸿麟,李斌桥,潘姬.F_e~+注入Si中的研究[J].天津大学学报(自然科学与工程技术版),1988(1). |
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| 作者姓名： | 赵鸿麟 李斌桥 潘姬 |
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| 作者单位： | 天津大学电子工程系
(赵鸿麟，李斌桥)，天津大学电子工程系(潘姬) |
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| 摘 要： | 本文的工作以内转换电子穆斯堡尔谱为主,并结合离子探针以及电学和光学等参数的测量,对硅中注入的F_e~+进行综合研究。根据实验结果我们认为在低温退火前后,高剂量注入的铁不是均匀地分布在注入层中,而是处在高浓度集中的微区中,并处在替位位置。低温退火后尽管晶体电学特性已基本恢复,但多数铁仍处于非电活性状态。高温退火后在注入层中形成铁硅化合物相的观点进一步由离子探针的实验结果得到证实。高温退火后晶体电阻率较大可能是由于铁硅化合物的析出在晶体中产生了大量的缺陷。
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| 关 键 词： | 离子注入 缺陷 穆斯堡尔谱 离子探针 |
STUDY ON Fe~+ IMPLANTED IN SILICON |
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| Zhao Honglin Li Bingqiao Pan Ji.STUDY ON Fe~+ IMPLANTED IN SILICON[J].Journal of Tianjin University(Science and Technology),1988(1). |
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| Authors: | Zhao Honglin Li Bingqiao Pan Ji |
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| Institution: | Department of Electronic Engineering |
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| Abstract: | Fe~+ implanted in silicon is studied by way of the conversion electron M(?)ssbauer spectroscopy, together with the second ion microprobe spectroscopy, and the measurements of the electrical and optical parameters of the implanted layer. The results show that before and after low temperature annealing, the high dose of the implanted ron in silicon is concentrated in many small zones in the implanted layer rather than uniformly distributed in it. The iron is in substitutional positions in these densely concentrated zones. After low temperature annealing the iron is still in electrically inactive state. The view that Fe-Si compound phase may form after high temperature annealing is further supported by the results of ion probe analysis. |
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| Keywords: | ion implantation defect Mossbauer spectroscopy ion probe |
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