Dielectric properties of low dielectric constant Ba0.60Sr0.40Mg0.15Ti0.85O3-Mg2TiO4 composite thin films for tunable applications |
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Authors: | LiNa Gao JiWei Zhai and Xi Yao |
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Institution: | (1) Functional Materials Research Laboratory, Tongji University, Shanghai, 200092, China |
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Abstract: | Ba0.60Sr0.40Mg0.15Ti0.85O3-xmol%Mg2TiO4 (x = 0–40 mol%) (BSTM-MT) composite thin films were fabricated by sol-gel method. The precursor solution of these composite
thin films was prepared through mixing the Ba0.60Sr0.40Mg0.15Ti0.85O3 and Mg2TiO4 solution. The microstructures and dielectric tunability of composite thin films were investigated. The dielectric constant
of composite thin films can be tailored from 155 to 55 by changing the concentration of Mg2TiO4. The dielectric loss of these composite thin films were still kept below 0.01 and the tunability was above 20% at a dc-applied
electric field of 500 kV/cm. Suitable dielectric constant, low dielectric loss, and high tunability of this kind of composite
thin films can be useful for potential microwave tunable applications.
Supported by the National Program on Key Basic Research Project from the Ministry of Science and Technology of China (Grant
No. 2009CB623302) and Specialized Research Fund for the Doctoral Program of Higher Education (SRFDP20060247003) and Shanghai
Committee of Science and Technology (Grant No. 07DZ22302) |
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Keywords: | sol-gel preparation thin film dielectric properties |
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