| GaAs—GaAlAs量子阱中光极化子 |
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| 引用本文： | 梁希侠,王旭.GaAs—GaAlAs量子阱中光极化子[J].内蒙古大学学报(自然科学版),1992,23(1):81-87. |
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| 作者姓名： | 梁希侠 王旭 |
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| 作者单位： | 内蒙古大学固体物理研究室，内蒙古大学固体物理研究室 |
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| 摘 要： | 本文计及子带跃迁和双声子过程,计算了限制在量子阱中光极化子能级,给出了自陷能和重正化质量数值计算结果,它是阱宽的函数.发现自陷能和有效质量在二维结果和三维结果之间,子带跃迁和双声子过程对自陷能的贡献不是很重要的.
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| 关 键 词： | 量子阱 电子-声子作用 极化子 |
Localized Optical Polaron in a GaAs-GaAlAs Quantum Well |
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| Liang Xixia,Wang Xu Laboratory of Solid-State Physics.Localized Optical Polaron in a GaAs-GaAlAs Quantum Well[J].Acta Scientiarum Naturalium Universitatis Neimongol,1992,23(1):81-87. |
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| Authors: | Liang Xixia Wang Xu Laboratory of Solid-State Physics |
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| Institution: | Liang Xixia;Wang Xu Laboratory of Solid-State Physics |
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| Abstract: | The energy levels of an optical polaron localized in a quantum well are calculated.The sub- band-transition proceases and the two-phonon processes are included in our calculation.The numerlcal results for the self-trapping energy and the renormalized mass of the polaron in a GaAs-Ga.Al_(1-x)As quantum well are given as functions of the thickness of the well.It is found that both the self-trapping energy and the effective mass in a quantum well lie between that in 2D and 3D systems.The contribu- tion of two-subband and two-phonon processes to the self-trapping energy is not important. |
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| Keywords: | quantum well electron-phonon intercaction polaron |
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