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| 布洛赫线存储器稳定性的研究 | |
| 引用本文： | 蔡丽景,顾建军,孙会元. 布洛赫线存储器稳定性的研究[J]. 东莞理工学院学报, 2011, 18(3): 58-61 |
| 作者姓名： | 蔡丽景 顾建军 孙会元 |
| 作者单位： | 1. 中国联合网络通信有限公司河北省分公司信息化部,石家庄,050041 2. 河北民族师范学院教务处,河北承德,067000 3. 河北师范大学物理科学与信息工程学院,石家庄,050016 |
| 基金项目： | 河北省自然科学基金项目(A2009000254); 河北师范大学博士基金资助项目(L2006B10) |
| 摘 要： | 实验研究了直流偏场和温度交替作用对布洛赫线存储器中垂直布洛赫线(VBL)链的影响.发现三类硬磁畴中VBL链是在临界温度范围[T1,T2]内解体的,对于三类硬磁畴有着相同的T1,从而进一步证明了温度作用下硬磁畴畴壁中的VBL是逐步解体的,同时也证实了三类硬磁畴的畴壁结构是一致的.畴壁中VBL链开始不稳定的最小临界温度与畴... |
| 关 键 词： | 布洛赫线存储器 垂直布洛赫线 热稳定性 |
Study on the Stability of Bloch Line Memory |
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| CAI Li-jing,GU Jian-jun,SUN Hui-yuan. Study on the Stability of Bloch Line Memory[J]. Journal of Dongguan Institute of Technology, 2011, 18(3): 58-61 | |
| Authors: | CAI Li-jing GU Jian-jun SUN Hui-yuan |
| Affiliation: | CAI Li-jing1 GU Jian-jun2 SUN Hui-yuan3(1.Ministry of Information,China Unicom Hebei Branch Corporation Limited,Shijiazhuang 050041,China,2.Academic Affairs Division,Hebei Normal University for Nationalities,Chengde 067000,3.College of Physics Science and Information Engineering,Hebei Normal University,Shijiazhuang 050016,China) |
| Abstract: | The behavior of VBL in Bloch line Memory subjected to both direct current field and temperature was experimentally studied.We find an interval of critical temperature ,which can make VBL chains breakdown and is related to the parameter of magnetic bubble material.For the three kinds of hard domains,T1 is the same.It proves VBL in hard domains wall breakdown gradually affected by temperature,and it confirmed that the structure in three kinds of hard domains is the same.And this paper concludes that the disap... |
| Keywords: | Bloch line memory Vertical Bloch line stability |
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