| Si雪崩冷阴极的电子发射特性 |
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| 引用本文： | 郭太良,王树程,章秀淦,林渠渠,高怀蓉. Si雪崩冷阴极的电子发射特性[J]. 福州大学学报(自然科学版), 1995, 0(3): 30-34 |
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| 作者姓名： | 郭太良 王树程 章秀淦 林渠渠 高怀蓉 |
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| 作者单位： | 福州大学电子科学与应用物理系 |
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| 摘 要： | 采用离子注入和快速退火法可制备Ｓｉ浅ｐ－ｎ结阵列，通过真空清洁处理和铯氧激活后制成阵列式Ｓｉ浅ｐ－ｎ结雪崩冷阴极，其最高电子发射效率为１６％。本文介绍阵列式Ｓｉ雪崩冷阴极的制各方法，给出了Ｓｉ冷阴极的雪崩电子发射特性，讨论了影响发射稳定性的主要因素。
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| 关 键 词： | 浅p－n结阵列 雪崩电子发射 冷阴极 铯氧激活 稳定性 |
Electron Emssion Characterestics of Si Avalanche Cold Cathodes |
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| GuoTailiang,WangShucheng,Zhang Xiugang,Ling Ququ,Gao Huairong. Electron Emssion Characterestics of Si Avalanche Cold Cathodes[J]. Journal of Fuzhou University(Natural Science Edition), 1995, 0(3): 30-34 |
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| Authors: | GuoTailiang WangShucheng Zhang Xiugang Ling Ququ Gao Huairong |
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| Affiliation: | GuoTailiang; WangShucheng; Zhang Xiugang; Ling Ququ; Gao Huairong(Department of Electronics Scicnce and Applied Physics,Fuzhou University,Fujian,350002) |
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| Abstract: | Arrayed cold cathodes of shallow Si p-n junctions wcre fabricated by ion implantation,rapid thermal annealing,vacuum clean treatment and cesium-oxygen activation,with the maximum electron emission efficiency of 16%.In this paper,the fabrication technology of arrayed Si cold cathodes was described,the electron emission properties of arrayed Si cold cathodes were presented,and factors affecting emission stability of arrayed Si cold cathode were discussed. |
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| Keywords: | arrayed shallow p-n junctions avalanche electron emission cold cathode cesium-oxygen activation stability |
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