Electroluminescent property of tetrakis(phenyl)porphyrin carbonyl ruthenium(Ⅱ)

Luminescent tetrakis(phenyl)porphyrin carbonyl ruthenium (Ⅱ) (RuTPPCO) complex was employed as a doped emitting material to fabricate red organic electroluminescent (EL) devices. The EL device structure was ITO/copper phthalocyanine (Cu-Pc) (15.0 nm)/N,N′-di(α-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4, 4′-diamine (NPB)(60.0 nm)/tris(8-hydroxyquinolinato)aluminum (Alq3):RuTPPCO (50.0 nm)/LiF (1.0 nm)/Al (200.0 nm)]. The codeposited films of Alq3:RuTPPCO were utilized as the emitting layer to construct EL devices. Experimental results showed that energy transfer from Alq3 to RuTPPCO occurred in the codeposited films. The EL property of the codeposited Alq3:RuTPPCO films with different RuTPPCO concentrations was described. For the EL device with the RuTPPCO concentration of 15% by weight, deep red electroluminescence at 656 nm with the maximum EL efficiency of 0.32 cd/A was achieved.

Electroluminescent property of tetrakis(phenyl)porphyrin carbonyl ruthenium (II)

Luminescent tetrakis(phenyl)porphyrin carbonyl ruthenium (II) (RuTPPCO) complex was employed as a doped emitting material to fabricate red organic electroluminescent (EL) devices. The EL device structure was ITO/copper phthalocyanine (Cu-Pc) (15.0 nm)/N,N′-di(α-naphthyl)-N, N′-diphenyl-(1,1′-biphenyl)-4, 4′-diamine (NPB) (60.0 nm)/tris(8-hydroxyquinolinato)aluminum (Alq₃): RuTPPCO (50.0 nm)/LiF (1.0 nm)/Al (200.0 nm)]. The code-posited films of Alq₃:RuTPPCO were utilized as the emitting layer to construct EL devices. Experimental results showed that energy transfer from Alq₃ to RuTPPCO occurred in the codeposited films. The EL property of the codeposited Alq₃:RuTPPCO films with different RuTPPCO concentrations was described. For the EL device with the RuTPPCO concentration of 15% by weight, deep red electroluminescence at 656 nm with the maximum EL efficiency of 0.32 cd/A was achieved.