高频下晶体管S参量图示测量初探

提出了为清晰，稳定地获得高频下晶体管特性曲线，Ｓ参量以及具有晶体管个性的特征频率匹配参数的一种独特的新方法。这种方法以双端口网络理论为基础的电路设计思想作框架，并以宽带匹配网络理论的散射参量即Ｓ参量为信号传输及电路计算的依据。

Initial Research on Graphic Measurment for Transistor S Parameters Under High Frequency

A unique new method is advanced for obtaining the transistor characteristic curves clearly and stably, S parameters and the frequency matching parameters with the transistor individuality.The method is framed by the designing think of electronic circuitry based on the Double Port Network Theory.And it is terms of the Wideband Matching Network Theory to transmit the signals and to calculate the circuitry using the scattering parameters namely S parameters.The pattern of superimposed frequencies is the determining factor for high frequency caracteristic of the plotting board in video frequency.And the pattern of separating the frequencies before the plotting is one of the key factors for the accuracy of positive transmitting.Therefor this kind of plotting method is entirely different from and other traditional high frequency measuring.