| 含Si金刚石涂层的工艺研究 |
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| 引用本文： | 刘素田,刘伟,黑立富,唐伟忠,吕反修.含Si金刚石涂层的工艺研究[J].北京科技大学学报,2007,29(4):408-412,446. |
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| 作者姓名： | 刘素田 刘伟 黑立富 唐伟忠 吕反修 |
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| 作者单位： | 北京科技大学材料科学与工程学院,北京,100083 |
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| 摘 要： | 利用微波等离子体辅助化学气相沉积的方法,以H2、CH4和D4(八甲基环四硅氧烷)为沉积先驱物,探索了一种在硬质合金基底上制备出含Si元素的金刚石涂层的新工艺. 试图利用这种新的方法,进一步提高金刚石涂层对硬质合金基底的附着力. 实验结果表明:当D4的流量相对CH4的流量较大时,得到球团状的胞状组织;只有当D4和CH4的流量相当的情况下,才能沉积出质量较好的金刚石涂层,同时又含有少量的Si使金刚石涂层的附着力较好.
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| 关 键 词： | 金刚石涂层 微波等离子体化学气相沉积 八甲基环四硅氧烷 硬质合金 附着力 金刚石涂层 工艺研究 containing diamond coatings process 质量 情况 胞状组织 球团 流量 结果 实验 附着力 新工艺 元素 硬质合金基底 先驱物 气相沉积 八甲基环四硅氧烷 方法 |
| 修稿时间： | 2006-02-212006-04-18 |
Research on the process of diamond coatings containing Si |
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| LIU Sutian,LIU Wei,HEI Lifu,TANG Weizhong,LV Fanxiu.Research on the process of diamond coatings containing Si[J].Journal of University of Science and Technology Beijing,2007,29(4):408-412,446. |
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| Authors: | LIU Sutian LIU Wei HEI Lifu TANG Weizhong LV Fanxiu |
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| Institution: | Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China |
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| Abstract: | A new process of diamond coatings was explored with H2,CH4 and D4 as precursors by using microwave plasma chemical vapor deposition technique.The diamond coating containing Si element was deposited on a cemented carbide substrate.This process was attempted to enhance the adhesion of the diamond coating to the substrate.The results reveal that when the flow of D4 is larger than that of CH4 the cellular structure is obtained,and the diamond coating with good quality and good adhesion is deposited with a little Si in it only when the flow of D4 is equivalent to that of CH4. |
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| Keywords: | diamond coatings microwave plasma chemical vapor deposition (MPCVD) octamethylcyclotetrasiloxane cemented carbide adhesion |
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