| 基于Preisach的MFIS结构器件C-V模型的改进 |
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| 引用本文： | 张俊杰.基于Preisach的MFIS结构器件C-V模型的改进[J].科学技术与工程,2011,11(17). |
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| 作者姓名： | 张俊杰 |
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| 作者单位： | 洛阳师范学院物理与电子信息学院,洛阳,471022 |
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| 摘 要： | 考虑历史电场效应，将描述铁电层矫顽电场分布的Preisach模型引入MFIS结构，和传统的MOS结构器件电荷薄片模型结合，对MFIS结构的C-V模型进行改进。为验证模型的有效性，与文献中的实验数据进行比较。结果表明，改进模型能够很好地与实验数据吻合，可以被用来描述MFIS结构器件的C-V特性及记忆窗口。
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| 关 键 词： | 铁电 MFIS C-V 记忆窗口 |
| 收稿时间： | 3/17/2011 9:02:15 AM |
| 修稿时间： | 2011/3/21 0:00:00 |
Improvement of C-V model for Metal-Ferroelectric-Insulator-Semiconductor Structure Device based on Preisach |
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| Zhang Jun-jie.Improvement of C-V model for Metal-Ferroelectric-Insulator-Semiconductor Structure Device based on Preisach[J].Science Technology and Engineering,2011,11(17). |
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| Authors: | Zhang Jun-jie |
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| Institution: | ZHANG Jun-jie,WANG Xi-juan (Faulty of Physics & Electronic Information,Luoyang Normal College,Luoyang 471022,P.R.China) |
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| Abstract: | Considering the history-dependent electric field effect, Preisach model which describe the dipole switching is introduced into metal-ferroelectric-insulator-semiconductor (MFIS) structure, and is combined with Charge-sheet model of MOS structure. By this way, the C-V model of MFIS structure is improved. Finally, the improved model is used and compared with the experiment, and simulation results show that the improved model can predict the C-V characteristic and memory window of MFIS structure more consistently with the experimental data. |
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| Keywords: | Ferroelectric MFIS C-V Memory Window |
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