背面引线压力／氢离子敏传感器的研究

报道了一种含微参比电极的差分结构，并可与其它敏感元和信号处理电路完全隔离的背面引线氢离子敏感场效应（ｐＨ－ＩＳＦＥＴ）新结构。基于硅的固相键合技术和硅微机械加工技术以及常规Ｎ阱ＭＯＳ工艺，研制成集成压力／ｐＨ－ＩＳＦＥＴ传感器，设计制作了高稳定的可调芯片自恒温系统，经实际工艺流水制成了样管，初步的测量结果证实了这种背面引线、微参比电极、全集成的新结构设计是成功的。

INVESTIGATIONS OF AN INTEGRA TED BA CKSIDE CONTACT PRESSURE/PH-ISFET SENSOR

Anovelbackside contact dual pH-ISFET structure withitsmicroreferenceelectrode which can be completely isolated from other senSitive elemcntsand signalconditioning circuits is presented in this paper.Based on the silicon bondingmethod, silicon micromechanical technique and standard N-well biMOS compatibleprocess,an integrated pressure/pH-ISFET sensor is developed.A highlystsbleChip-Temperature-Constant system is also designed and developed.Measurementprove;the possibilityof the new structure and good characteristics of the sensor.