首页 | 本学科首页   官方微博 | 高级检索  
     

PZNT/LSCO异质结的制备与反铁电性能研究
引用本文:潘刚, 王根水, 张帅, 董显林, 刘世建. PZNT/LSCO异质结的制备与反铁电性能研究[J]. 上海师范大学学报(自然科学版), 2010, 39(1): 50-55
作者姓名:潘刚   王根水   张帅   董显林   刘世建
作者单位:1. 上海师范大学数理学院,上海,200234
2. 中国科学院,上海硅酸盐所信息、功能材料与器件研究中心,上海200050
3. 上海电力学院,数理系,上海200090
基金项目:中国科学院"百人计划" 
摘    要:采用溶胶凝胶法在SiO2/Si(100)衬底上制备了PbZr0.96Ti0.03Nb0.01O3/La0.05Sr0.05CoO3(PZNT/LSCO)异质结,研究了该异质结构的表面形貌、结构特征、介电特性和储能特性.LSCO具有非常特殊的表面形貌,PZNT/LSCO异质结为随机取向.研究给出了PZNT/LSCO异质结的介电温谱.PZNT/LSCO的储能密度呈现随测试频率先增大后减小的趋势.在500kV/cm电场强度下,频率为1kHz时,PZNT/LSCO具有最大的储能密度5.35J/cm^3.

关 键 词:PZNT  表面形貌  XRD  介电特性  储能密度

Preparation and antiferroelectric properties of PZNT/LSCO heterojunction
PAN Gang,WANG Gen-shui,ZHANG Shuai,DONG Xian-lin,LIU Shi-jian. Preparation and antiferroelectric properties of PZNT/LSCO heterojunction[J]. Journal of Shanghai Normal University(Natural Sciences), 2010, 39(1): 50-55
Authors:PAN Gang  WANG Gen-shui  ZHANG Shuai  DONG Xian-lin  LIU Shi-jian
Affiliation:PAN Gang1,WANG Gen-shui2,ZHANG Shuai2,DONG Xian-lin2,LIU Shi-jian3(1.Mathematics , Science College,Shanghai Normal University,Shanghai 200234,China,2.Shanghai Institute of Ceramic Academy of Sciences,The Center on Materials , Deviees for Information Technology Research Shanghai Institue of Ceramics,Shanghai 200050,3.Shanghai University of Electronic Power,Department of Mathematics , Physics,Shanghai 200090,China)
Abstract:PbZr0.96Ti0.03Nb0.01O3/La0.05Sr0.05CoO3(PZNT/LSCO) heterojunction was prepared on SiO2/Si(100) by sol-gel method.The surface morphology,orientation structure,dielectric properties and energy storage properties were researched.LSCO has great strange surface,and PZNT/LSCO heterojunction show random orientation.In this paper,temperature dependence of dielectric constant and loss of PZNT/LSCO heterojunction was achieved.Energy storage density of PZNT show tendency of first up and then down,with the increase of ...
Keywords:PZNT  XRD
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《上海师范大学学报(自然科学版)》浏览原始摘要信息
点击此处可从《上海师范大学学报(自然科学版)》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号