| Si夹层对GaAs/AlAs异质结的影响 |
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| 引用本文： | 李永平,刘杰,姜永超,田强.Si夹层对GaAs/AlAs异质结的影响[J].山东大学学报(理学版),2008,43(1):40-42. |
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| 作者姓名： | 李永平 刘杰 姜永超 田强 |
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| 作者单位： | 1. 青岛农业大学理学院,山东,青岛,266109
2. 北京师范大学物理系,北京,100875 |
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| 基金项目： | 教育部高校骨干教师资助计划 |
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| 摘 要： | 用MBE生长了GaAs/Si/AlAs异质结及其对比样，通过深能级瞬态谱技术(DLTS)和X射线光电子谱测量(XPS)研究了Si夹层的引入对异质结的影响，研究发现Si夹层的引入不会引起明显的深能级缺陷，异质结仍保持较好的质量，但使GaAs/AlAs的带阶发生了改变。
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| 关 键 词： | GaAs/AlAs异质结 Si夹层 X射线光电子谱测量 深能级瞬态谱测量 |
| 文章编号： | 1671-9352（2008）01-0040-03 |
| 收稿时间： | 2007-12-03 |
| 修稿时间： | 2007年12月3日 |
Effect of Si interlayer on GaAs/AlAs hetero-junction |
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| LI Yong-ping,LIU Jie,JIANG Yong-chao,TIAN Qiang.Effect of Si interlayer on GaAs/AlAs hetero-junction[J].Journal of Shandong University,2008,43(1):40-42. |
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| Authors: | LI Yong-ping LIU Jie JIANG Yong-chao TIAN Qiang |
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| Institution: | 1. School of Science, Qingdao Agricultural University, Qingdao 266109, Shandong, China; 2. Department of Physics, Beijing Normal University, Beijing 100875, China |
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| Abstract: | GaAs/AlAs heterojunctions prepared by MBE were examined. The influence of 0.5 ML and 1ML Si interlayer on GaAs/AlAs were investigated by DLTS technique and XPS measurement. The results reveal that the Si interlayer has little influence on the crystal, and the valence-band offset of GaAs/AlAs is increased because of the presence of the Si interlayer. |
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| Keywords: | GaAs/AlAs hetero-junction Si interlayer X-ray photoelectron spectroscopy Deep level transient spectroscopy |
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