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国产硅片锥形缺陷的改善方法
引用本文:陆振杰,李杰,郎玉红.国产硅片锥形缺陷的改善方法[J].上海师范大学学报(自然科学版),2020,49(4):483-486.
作者姓名:陆振杰  李杰  郎玉红
作者单位:上海华力微电子有限公司扩散注入科,上海201203;上海华力微电子有限公司扩散注入科,上海201203;上海华力微电子有限公司扩散注入科,上海201203
摘    要:针对某国产硅片在验证过程中的锥形缺陷,通过优化拉晶和制作工艺中的等待时间管控,减少硅片的缺陷,提升硅片的质量.

关 键 词:国产硅片  锥形缺陷  硅片磨边  等待时间
收稿时间:2020/5/13 0:00:00

The improvement of the cone defect of domestic silicon wafer
LU Zhenjie,LI Jie and LANG Yuhong.The improvement of the cone defect of domestic silicon wafer[J].Journal of Shanghai Normal University(Natural Sciences),2020,49(4):483-486.
Authors:LU Zhenjie  LI Jie and LANG Yuhong
Abstract:The cone defects in the verification of domestic silicon wafer were focused and studied in the paper.By optimizing the control of the waiting time in pulling and producing during the silicon wafers process, the cone defects of silicon wafers were reduced and the quality of silicon wafer was greatly improved.
Keywords:domestic silicon wafer  cone defect  silicon wafer edging  waiting time
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