| 四探针测半导体材料杂质分布 |
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| 引用本文： | 高玮 谢宜臣. 四探针测半导体材料杂质分布[J]. 佳木斯大学学报, 2001, 19(1): 100-102 |
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| 作者姓名： | 高玮 谢宜臣 |
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| 作者单位： | 佳木斯大学理学院物理系!黑龙江佳木斯154007 |
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| 摘 要： | 设计一个新的近代物理实验题目，利用阳极氧化法对半导体材料逐次去层，采用四探针法测量其每层的电阻率及相应杂质浓度，可得出半导体材料的杂质分布N(x），实验设备简单，测量方便，结果准确，并提供了自制四探针测量仪的方法。
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| 关 键 词： | 四探针 半导体材料 杂质分布 |
| 文章编号： | 1008-1402(2001)01-0100-03 |
| 修稿时间： | 2000-12-06 |
THE MEASUREMENT OF IMPURITY DISTRIBUTION IN SEMICODUCTOR MATERIAL WITH FOUR POINT PROBE METHOD |
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| GAO Wei,XIE Yi-chen. THE MEASUREMENT OF IMPURITY DISTRIBUTION IN SEMICODUCTOR MATERIAL WITH FOUR POINT PROBE METHOD[J]. Journal of Jiamusi University(Natural Science Edition), 2001, 19(1): 100-102 |
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| Authors: | GAO Wei XIE Yi-chen |
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| Abstract: | A new topic in modern physics experiment is designed. Semiconductor material is removed layer by layer with anode oxidation method. Resistivity and relevant impurity concentration in every layer is measured with four point probe method. The impurity distribution of semiconductor material N(x)is obtained. The experiment equipment is simple, measurement is convenient, and result is accurate. The method to make four point probe instrument is provided. |
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| Keywords: | four point probe semiconductor material impurity distribution |
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