Improvement in the intense pulsed emission stability of grown CNT films via an electroless plated Ni layer |
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| Authors: | FanGuang Zeng Xin Li WeiHua Liu ShuZhen Qiao HuaLi Ma Rui Zhang LianSheng Xia Yi Chen XingGuang Liu Huang Zhang |
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| Institution: | (1) Electronic Materials Division, National Physical Laboratory, Dr. K.S. Krishnan Marg, Pusa, New Delhi, 110012, India;(2) Department of Physics, Thin Film Laboratory, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India |
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| Abstract: | Carbon nanotube (CNT) films were grown on silicon wafers with and without a nickel layer (Si-CNT and Ni-CNT) via the pyrolysis
of iron phthalocyanine. The nickel layer was prepared using the electroless plating method. To study the emission stability
of Si-CNT and Ni-CNT cathodes during intense pulsed emission, emission characteristics were measured repeatedly with a diode
structure using a Marx generator as a voltage source. For the peak values of the pulsed voltage, which were in the range between
1.62–1.66 MV (corresponding to electric field intensities between 11.57–11.85 V/μm), the first cycle emission current was
109.4 A for Si-CNT and 180.5 A for Ni-CNT. By comparing the normalized emission currents of the Si-CNT and Ni-CNT cathodes,
the improvement in the emission stability can be easily quantified. The number of emission cycles necessary for the peak current
to decay from 100% to 50% increased from ∼3 for Si-CNT to ∼11 for a Ni-CNT film. |
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| Keywords: | carbon nanotube nickel layer intense pulsed emission improved emission stability normalized current |
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