| 低温下晶体管击穿电压的温度特性与分析 |
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| 引用本文： | 薄仕群,李彦波.低温下晶体管击穿电压的温度特性与分析[J].河北省科学院学报,1997,14(1):15-19. |
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| 作者姓名： | 薄仕群 李彦波 |
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| 作者单位： | 河北大学电子与信息工程系 |
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| 摘 要： | 本文给出了从２００Ｋ到１０Ｋ低温下，硅双极晶体管击穿电压随温度而变化的实验结果，建立了理论模型，并对实验结果作出合理解释
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| 关 键 词： | 硅双极晶体管，低温，击穿电压 |
TEMPERATURE CHARACTER AND ANALYSES OF SILICON BIPOLAR TRANSISTORS BREAKDOWN VOLTAGES AT LOW-TEMPERATURE |
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| Bo,Shiqun,Li,Yanbo,Zhang,Xudong.TEMPERATURE CHARACTER AND ANALYSES OF SILICON BIPOLAR TRANSISTORS BREAKDOWN VOLTAGES AT LOW-TEMPERATURE[J].Journal of The Hebei Academy of Sciences,1997,14(1):15-19. |
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| Authors: | Bo Shiqun Li Yanbo Zhang Xudong |
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| Institution: | Bo Shiqun Li Yanbo Zhang Xudong |
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| Abstract: | In this paper,have to do with experimental results of break down voltages of silicon bipolar transistors at low temperature from 200K to 10K.Gives a theoretical model and the experimental results have been well explanation. |
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| Keywords: | Silicon bipolar transistor Low-temperature Breakdown voltage |
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