| 感应加热线圈对PVT法生长大直径SiC晶体的影响 |
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| 引用本文： | 张群社,陈治明.感应加热线圈对PVT法生长大直径SiC晶体的影响[J].西安理工大学学报,2007,23(1):83-86. |
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| 作者姓名： | 张群社 陈治明 |
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| 作者单位： | 西安理工大学,自动化与信息工程学院,陕西,西安,710048 |
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| 基金项目： | 陕西省重大项目;西安理工大学校科研和教改项目 |
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| 摘 要： | 采用有限元分析法,系统地研究了用PVT法制备大尺寸SiC晶体生长装置中感应加热线圈的不同高度和匝间距对晶体生长温度场的影响;获取了通过增大线圈匝间距和适当提高线圈高度可使系统加热效率降低、晶体生长速率减小,但同时却有利于SiC粉料有效升华的结论。此结论同样适用于AlN、GaN等半导体材料的制备。
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| 关 键 词： | PVT法 SiC粉源 温度场 温度梯度 |
| 文章编号： | 1006-4710(2007)01-0083-04 |
| 修稿时间： | 2006-10-23 |
The Effect of Inductive Coil on the Large-Size SiC Crystal Growth by PVT Method |
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| ZHANG Qun-she,CHEN Zhi-ming.The Effect of Inductive Coil on the Large-Size SiC Crystal Growth by PVT Method[J].Journal of Xi'an University of Technology,2007,23(1):83-86. |
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| Authors: | ZHANG Qun-she CHEN Zhi-ming |
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| Abstract: | In this paper,the influences of different spaces between turns of the induction coil and different relative positions between the coil and the crucible on the temperature distribution in the growth system have been investigated systematically for the large size SiC growth,using the finite element analysis.All simulations results indicate that heating efficiency and the growth rate were reduced by raising coil height and space of turns,whereas the conclusion obtained is favorable to the evaporation of SiC powder.Also,this finding can be adaptable to the preparation of AlN/GaN semiconducting materials. |
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| Keywords: | PVT method SiC powder temperature distribution temperature gradient |
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