| 非对称性隧穿势垒Ge/Si复合纳米结构MOSFET存储特性的电路模拟 |
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| 引用本文： | 周少华,杨红官.非对称性隧穿势垒Ge/Si复合纳米结构MOSFET存储特性的电路模拟[J].湖南工程学院学报(自然科学版),2006,16(1):12-15. |
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| 作者姓名： | 周少华 杨红官 |
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| 作者单位： | 湖南大学,应用物理系,湖南,长沙,410082;永州职业技术学院,湖南,永州,425001;湖南大学,应用物理系,湖南,长沙,410082 |
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| 摘 要： | 介绍了非对称性势垒单电子管(ATBs)的电路模拟和特性,以及采用准经典的Monte Carlo方法对Ge/Si复合纳米结构MOSFET存储器的电路模拟,得出由于台阶状复合势垒的作用,在擦写时间保持μs和ms量级的同时,存储时间可长达数年.从而解决了快速编程与长久存储之间的矛盾.
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| 关 键 词： | 非对称势垒 复合纳米结构 单电子存储器 电路模拟 |
| 文章编号： | 1671-119X(2006)01-0012-04 |
| 收稿时间： | 09 12 2005 12:00AM |
| 修稿时间： | 2005年9月12日 |
Circuit Simulation of Single Electron Device with Asymmetric Tunnel Barriers |
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| ZHOU Shao-hua,YANG Hong-guan.Circuit Simulation of Single Electron Device with Asymmetric Tunnel Barriers[J].Journal of Hunan Institute of Engineering(Natural Science Edition),2006,16(1):12-15. |
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| Authors: | ZHOU Shao-hua YANG Hong-guan |
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| Institution: | 1. Dept. of Applied Physics, Hunan University, Changsha 410082, China; 2. Yongzhou Vocational Technical College, Yongzhou 425001, China |
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| Abstract: | In this paper,the property and circuit simulation of the Single Electron Device based on Asymmetric Tunnel Barriers, and the Ge/Si nanocrystal MOSFET memory with the Monte Carlo method in quasic classical approximation are introduced. It is demonstrated that the proposed device can achieve the programming in the order of/~s or ms owing to the hetero-energy bands, and the retention time is increased to several years at the same time. Hence the conflict between high speed programming and long retention can be efficiently resolved. |
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| Keywords: | asymmetric tunnel barrier Ge/Si nanocrystal structure single-electron memory circuit simulation |
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