| 锡掺杂的氧化铟透明导电膜的霍尔系数测量 |
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| 引用本文： | 葛水兵,蒋紫松.锡掺杂的氧化铟透明导电膜的霍尔系数测量[J].苏州大学学报(医学版),1997,13(3):60-63. |
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| 作者姓名： | 葛水兵 蒋紫松 |
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| 作者单位： | 苏州大学薄膜材料实验室，苏州大学薄膜材料实验室，苏州大学薄膜材料实验室，苏州大学薄膜材料实验室 苏州 215006，苏州 215006，苏州 215006，苏州 215006 |
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| 摘 要： | 采用直流辉光等离子体辅助反应蒸发法在玻璃基片上沉积了锡掺杂的氧化铟锡（ＩＴＯ）透明导电膜。在沉积过程中保持了辉光放电电流、氧分压、氧流量、蒸发速率等工艺参数不变，而基片温度由室温变化到达３００℃。用四探针法测量了膜的方阻和用直流法测量了膜的霍尔系数，计算出膜的电阻率ρ、霍尔迁移率μ、载流子浓度ｎ，从而研究了基片温度对膜的导电性能的影响。
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| 关 键 词： | 载流子浓度 氧化铟 导电膜 霍尔系数 ITO |
HALL COEFFICIENT MEASUREMENT OF CONDUCTIVE AND TRANSPARENT INDIUM TIN OXIDE FILMS |
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| Ge Shuibing Jiang Zisong Cheng Shanhua Ye Chao.HALL COEFFICIENT MEASUREMENT OF CONDUCTIVE AND TRANSPARENT INDIUM TIN OXIDE FILMS[J].Journal of Suzhou University(Natural Science),1997,13(3):60-63. |
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| Authors: | Ge Shuibing Jiang Zisong Cheng Shanhua Ye Chao |
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| Abstract: | The conductive and transparent Indium Tin Oxide films have been deposited on the glass substrates by using d. c. gas discharge plasma enhanced evaporation. In the experiments, the substrate temperatures have been changed from room temperature to 300 C as same as discharge current, Oxygen pressure and flow rate, evaporating rate. The effects of substrate temperarure on resistivity of the films have been studied with the measurement of Hall coefficient. |
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| Keywords: | Plasma enhanced evaporation Substrate temperature Carrier concentration Hall mobility |
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