| 21世纪深亚微米芯片技术的新进展 |
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| 引用本文： | 郑学仁.21世纪深亚微米芯片技术的新进展[J].华南理工大学学报(自然科学版),2002,30(11):81-84. |
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| 作者姓名： | 郑学仁 |
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| 作者单位： | 华南理工大学,应用物理系,广东,广州,510640 |
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| 摘 要： | 着重介绍对微电子技术发展有重大意义的集成电路关键技术的进展情况，MOSFET结构的探索创新，高K和低K绝缘材料的开发运用，铜布线芯片技术，极紫外线暴光技术以及SoC设计技术等里程碑式的进展，使集成电路朝着规模越来越大，图形线条越来越细，功耗越来越低，工作速度越来越快的方向不断发展，为21世纪IT产业的发展奠定坚实基础。
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| 关 键 词： | 21世纪 深亚微米芯片技术 微电子技术 集成电路 光刻 系统级芯片 MOSFET 图形转移 布线工艺 |
| 文章编号： | 1000-565X(2002)11-0081-04 |
Progress in the Developments of DSM IC Technology in the 21st Century |
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| Zheng Xue_ren.Progress in the Developments of DSM IC Technology in the 21st Century[J].Journal of South China University of Technology(Natural Science Edition),2002,30(11):81-84. |
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| Authors: | Zheng Xue_ren |
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| Abstract: | The latest developments of IC Technology which is the foundation of the information technology (IT) are introduced in this paper. The application of the smart structure of MOSFET,high K and low K material used as the insulator in IC,copper interconnecting technology,EUVL (extreme ultraviolet lithography) make IC smaller and smaller in size of line, lower and lower in power dissipation and faster and faster in working speed. Such developments have laid a solid foundation for the development of IT Technology in the 21 st century. |
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| Keywords: | microelectronics integrated circuit lithography system on chip intellectual property |
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