| 铁磁/绝缘层/有机半导体/铁磁多层膜隧道结的隧穿磁电阻的温度和偏压特性研究 |
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| 引用本文： | 张佩佩,徐明,陈尚荣,吴艳南,周勋,刘杰. 铁磁/绝缘层/有机半导体/铁磁多层膜隧道结的隧穿磁电阻的温度和偏压特性研究[J]. 中国科学:物理学 力学 天文学, 2010, 40(4): 433-439 |
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| 作者姓名： | 张佩佩 徐明 陈尚荣 吴艳南 周勋 刘杰 |
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| 作者单位： | ① 四川师范大学物理与电子工程学院&固体物理研究所低维结构物理实验室, 成都 610068; ② 贵州师范大学物理与电子科学学院, 贵阳 550001 |
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| 基金项目： | 贵州省科技厅应用基础研究项目(编号: 黔科通J合[2006]2004)和四川省教育厅自然科学重点项目资助(编号: 07ZA095) |
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| 摘 要： | 采用Slonczewski的近自由电子模型, 利用转移矩阵的方法, 研究了铁磁/绝缘层/有机半导体/铁磁隧道结的自旋极化载流子隧穿的温度和偏压特性. 计算了T=4 K和T=300 K时, 隧穿磁电阻(Tunneling Magnetic Resistance, TMR)随偏压的变化关系, 同时还研究了零温时在有限偏压下隧穿磁电阻TMR与绝缘层厚度、有机半导体层厚度以及铁磁/有机半导体界面势垒U的变化关系. 我们的计算结果较好地解释了有关的实验 结论.
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| 关 键 词： | 多层膜 有机半导体 绝缘体 铁磁层 隧穿磁电阻 |
| 收稿时间： | 2009-12-09 |
| 修稿时间： | 2010-01-22 |
The temperature and voltage dependence of the tunneling magnetoresistance in ferromagnet /insulator /organic semiconductor /ferromagnet magnetic tunneling junction |
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| ZHANG PeiPei,XU Ming,CHEN ShangRong,WU YanNan,ZHOU Xun, , LIU Jie Institute of Solid State Physics , School of Physics , Electronic Engineering,Sichuan Normal University,Chengdu ,China, School of Physical , Electronic Science,Guizhou Normal University,Guiyang. The temperature and voltage dependence of the tunneling magnetoresistance in ferromagnet /insulator /organic semiconductor /ferromagnet magnetic tunneling junction[J]. SCIENCE CHINA Physics, Mechanics & Astronomy, 2010, 40(4): 433-439 |
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| Authors: | ZHANG PeiPei XU Ming CHEN ShangRong WU YanNan ZHOU Xun & LIU Jie Institute of Solid State Physics & School of Physics Electronic Engineering Sichuan Normal University Chengdu China School of Physical Electronic Science Guizhou Normal University Guiyang |
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| Affiliation: | ZHANG PeiPei1,XU Ming1,CHEN ShangRong1,WU YanNan1,ZHOU Xun1,2 & LIU Jie1 1 Institute of Solid State Physics & School of Physics , Electronic Engineering,Sichuan Normal University,Chengdu 610068,China,2 School of Physical , Electronic Science,Guizhou Normal University,Guiyang 550001 |
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| Abstract: | Based on Slonczewski's free-electron approximation and transfer matrix method,the temperature and/or bias-voltage dependence of the spin-polarized tunneling electrons in ferromagnet/insulator/organic semiconductor/ferromagnet magnetic tunneling junction are investigated.The variation of tunneling magnetoresistance (TMR) with voltage are calculated at T=4 K and T=300 K.Furthermore,the dependence of TMR on the thickness of the insulator layer or organic semiconductor layer,and OSM/FM interface potential barri... |
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| Keywords: | multilayer films organic semiconductor insulator ferromagnetic layer tunneling magnetic resistance |
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