| 扫描隧道谱研究半导体硅掺杂 |
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| 引用本文： | 吴敬文 陈浩. 扫描隧道谱研究半导体硅掺杂[J]. 东南大学学报(自然科学版), 1995, 25(6): 154-156 |
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| 作者姓名： | 吴敬文 陈浩 |
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| 作者单位： | 东南大学生物医学工程系 |
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| 摘 要： |
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| 关 键 词： | 扫描隧道谱 半导体 硅 掺杂 |
Study on Silicon Doping by Scanning Tunneling Spectroscoopy |
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| Wu Jingwen,ChenHao,Ding Desheng,LuZhuhong,WeiYu. Study on Silicon Doping by Scanning Tunneling Spectroscoopy[J]. Journal of Southeast University(Natural Science Edition), 1995, 25(6): 154-156 |
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| Authors: | Wu Jingwen ChenHao Ding Desheng LuZhuhong WeiYu |
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| Abstract: | Based on the study of silicon surface,for the first time in China,the electronic states of semiconductor surfaces by scanning tunneling spectroscopy(STS)is studied and the influence of doping type and doping concentration on STS are discussed.Doping type specifies the on-direction of STS curves while doping concentration modifies the shapes of the STS curves.Based on the relationship,thedoping types of MOS transistors,which lighten a new path for the inverse analysis of ULSI chips are analyzed. |
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| Keywords: | ilicon electron states surface analysis |
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