溅射功率和工作气压对磁控溅射铬薄膜光电学性质的影响

采用直流磁控溅射方法在石英基片上沉积铬薄膜.研究溅射功率、工作气压对铬薄膜结构、电学和光学性质的影响.利用X射线衍射仪、分光光度计和Van der Pauw方法分别检测薄膜的结构、光学和电学特性,利用德鲁特模型和薄膜的透射、反射光谱计算薄膜的厚度和光学常数.结果表明:制备的铬薄膜为体心立方的多晶态;在工作气压0.6Pa一定时,随着溅射功率从40W增加到120W,沉积速率呈非线性增加,薄膜更加致密,电阻率连续降低,在550nm波长处,薄膜的折射率从3.52增大到功率80W时的最大值(3.88),尔后逐渐减小至3.69;消光系数从1.50逐渐增大到2.20;在溅射功率80W一定时,随着工作气压从0.4Pa增加到1.2Pa,沉积速率呈近线性降低,薄膜的电阻率逐渐变大,在550nm波长处,折射率从3.88减小到3.62,消光系数从2.55减小到1.48.

Influence of Sputtering Power and Ar Pressure on the Optical and Electrical Properties of Cr Thin Films Deposited by Magnetron Sputtering

Chromium(Cr) films were deposited on quartz substrates by the direct current magnetron sputtering.The effects of sputtering power and deposition pressure on the structural,optical and electrical properties of the films were investigated.X-ray diffraction,optical spectrophotometer,and Van der Pauw method were used to characterize the crystal structures,optical and electrical properties,respectively.Based on the Drude optical dielectric model,optical constants and thicknesses of the films were calculated from the transmittance and reflectance data.The results show that the films have a body-centered cubic crystalline structure.Furthermore,at 0.6 Pa deposition pressure,when sputtering power increases from 40 W to 120 W,the deposition rate shows a nonlinear increase,and the resistivity reduces continuously.The refractive index increases from 3.52 to 3.88 at sputtering power of 80 W,then declines to 3.69 gradually at 550 nm wavelength.The extinction coefficient increases gradually from 1.50 to 2.20.On the other hand,at a certain sputtering power(80 W),as the working pressure increases from 0.4 Pa to 1.2 Pa,the deposition rate shows a nearlinear decrease,the resistivity increases gradually,the refractive index decreases from 3.88 to 3.62 and extinction coefficient decreases from 2.55 to 1.48 at 550 nm wavelength.