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A 6-GHz ROM suitable for DDFS application in GaAs HBT technology |
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| Authors: | JianWu Chen Li Wang DanYu Wu GaoPeng Chen Zhi Jin XinYu Liu |
| Institution: | (1) Broadcom Corporation, Kosterijland 14, 3981, AJ, Bunnik, The Netherlands;(2) Electrical Engineering, Eindhoven University of Technology, Den Dolech 2, 5600, MB, Eindhoven, The Netherlands |
| Abstract: | Read-only memory (ROM) is widely implemented as a phase-to-amplitude mapping block in direct digital frequency synthesizers (DDFS). This paper derives an equivalent model for the ROM in a DDFS to analyze and reduce the access time that is critical to the performance of the DDFS. Moreover, the signal skew observed in the simulation waveform is illustrated. The proposed 64×3-bit ROM is integrated as a part of an 8-bit DDFS, which operates functionally at 6 GHz. Measurement results demonstrate the improvement in the spur free dynamic range. |
| Keywords: | read-only memory bipolar memory direct digital synthesizer direct digital frequency synthesizer gallium arsenlde het-erojunction bipolar transistor |
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