| MOS反型层量子化效应的解析计算 |
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| 引用本文： | 黄庆安. MOS反型层量子化效应的解析计算[J]. 东南大学学报(自然科学版), 1994, 24(5): 38-41 |
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| 作者姓名： | 黄庆安 |
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| 作者单位： | 东南大学微电子中心 |
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| 摘 要： | 根据三角形势场近似，给出了ＭＯＳ反型层波函数的解析表达式，计算了量子化效应作用下反型层电子的空间分布，并与经典理论进行了比较。
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| 关 键 词： | MOS 反型层 量子效应 |
Analytical Calculation of Quantum Effect in MOS Inversion Layer |
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| Huang Qingan. Analytical Calculation of Quantum Effect in MOS Inversion Layer[J]. Journal of Southeast University(Natural Science Edition), 1994, 24(5): 38-41 |
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| Authors: | Huang Qingan |
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| Abstract: | Based on the approximation of triangular potential field,the analytical formula for thewave function in a MOS inversion layer is presented,and the electron distribution by the quantum ef-fect is calculated. The results are compared with those by the classical theory. |
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| Keywords: | metal- oxide-semiconductor structure inversion layer quantum effect |
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