| 门极换向晶闸管(GCT)扩散阻挡层的研究 |
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| 引用本文： | 吴春瑜,卢雪梅,白永生,刘一婷,张馨芳. 门极换向晶闸管(GCT)扩散阻挡层的研究[J]. 辽宁大学学报(自然科学版), 2006, 33(4): 289-291 |
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| 作者姓名： | 吴春瑜 卢雪梅 白永生 刘一婷 张馨芳 |
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| 作者单位： | 1. 辽宁大学,物理系,辽宁,沈阳,110036
2. 辽宁大学,教务处,辽宁,沈阳,110036 |
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| 基金项目： | 辽宁省科技厅自然科学基金（002021）;辽宁省教育厅自然科学基金（20021676） |
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| 摘 要： | 通过对多种阻挡层特性的分析,选定了熔点高、化学稳定性好、电阻率低的TiN薄膜作为门极换向晶闸管阳极的阻挡层.采用磁控溅射技术生长的TiN,经俄歇电子谱仪分析表明,TiN阻挡层系统能有效地阻挡硅和铝的相互扩散,可作为门极换向晶闸管阳极理想的阻挡层材料.
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| 关 键 词： | 扩散阻挡层 门极换向晶闸管 金属化． |
| 文章编号： | 1000-5846（2006）04-0289-03 |
| 收稿时间： | 2005-12-29 |
| 修稿时间： | 2005-12-29 |
The Research on Diffusion Barrier of Gate Commutated Thyristor |
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| WU Chun-yu,LU Xue-mei,BAI Yong-sheng,LIU Yi-ting,ZHANG Xin-fang. The Research on Diffusion Barrier of Gate Commutated Thyristor[J]. Journal of Liaoning University(Natural Sciences Edition), 2006, 33(4): 289-291 |
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| Authors: | WU Chun-yu LU Xue-mei BAI Yong-sheng LIU Yi-ting ZHANG Xin-fang |
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| Affiliation: | 1. Department of Physics ,Liaoning University,Shenyang 110036, China., 2. Office of Education Administrator, Liaoning University, Shenyang 110036, China |
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| Abstract: | Through the analysis of many diffusion barriers, TiN thin film was chosen as the diffusion barrier for the anode metallization of gate commutated thyristor for its high melting point and chemistry stability and low electrical resistivity. TiN thin film is deposited by magnetron sputtering technique. The TiN film barrier property against Cu diffusion was investigated through AES depth profiling, the obtained results show that TiN is a suitable diffusion barrier for anode metallizadon of gate commutated thyristor. |
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| Keywords: | diffusion barrier gate commutated thyristo metallistion. |
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