| 多晶硅压力传感器 |
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| 引用本文： | 张维新,毛赣如.多晶硅压力传感器[J].天津大学学报(自然科学与工程技术版),1996,29(3):466-468. |
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| 作者姓名： | 张维新 毛赣如 |
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| 摘 要： | 研制一种多晶硅压力传感器．它采用一氧化硅介质膜隔离代替ｐ－ｎ结隔离，提高了工作温度；通过控制掺杂浓度，改善了温度特性．实验表明，该传感器灵敏度高，工作温限高，温度漂移小．
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| 关 键 词： | 多晶硅 压力传感器 压阻效应 |
POLYCRYSTAL SILICON PRESSURE SENSORS |
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| zhang weixin, Mao Ganru, Yao Suying, Qu Hongwei.POLYCRYSTAL SILICON PRESSURE SENSORS[J].Journal of Tianjin University(Science and Technology),1996,29(3):466-468. |
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| Authors: | zhang weixin Mao Ganru Yao Suying Qu Hongwei |
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| Institution: | Dept. of Electronic Eng. |
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| Abstract: | The polycrystal silicon pressure sensor has been developed on the basis of the analysis of its electrical and piezoresistive characteristics. The polycrystal silicon pressure sensor can operate at higher temperatures because of the insulator with SiO2 dielectric instead of the p-n junction. The temperature characteristics have been improved by controling the dopant concentration.The experimental results show that the polycrystal silicon pressure sensor has high sensitivity,high operation temperature and low temperature shift. |
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| Keywords: | polycrystal silicon pressure sensor piezoresistive effect |
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