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a—Si:H/a—SiN_x:H超晶格薄膜的光声谱
引用本文:邱树业,王志超,刘湘娜,冯小梅. a—Si:H/a—SiN_x:H超晶格薄膜的光声谱[J]. 南京大学学报(自然科学版), 1990, 0(1)
作者姓名:邱树业  王志超  刘湘娜  冯小梅
作者单位:南京大学声学研究所,南京大学物理系,南京大学物理系,南京大学物理系
摘    要:我们应用光声技术,研究 a-Si:H/a-SiN_x:H 超晶格薄膜中载流子的非辐射复合和量子尺寸效应,发现载流子的非辐射复合与超晶格薄膜中的缺阱有关;超晶格薄膜的光学能隙随着势阱宽度减小而增大.

关 键 词:非晶半导体机器超晶格薄膜  光声谱

P HOTOACUSTIC SPECTROSCOPY OF a-Si:H/a-SiN_x:H SUPERLATTICE FILMS
Qiu Shuye. P HOTOACUSTIC SPECTROSCOPY OF a-Si:H/a-SiN_x:H SUPERLATTICE FILMS[J]. Journal of Nanjing University: Nat Sci Ed, 1990, 0(1)
Authors:Qiu Shuye
Affiliation:Qiu Shuye (Institute of Acoustics)Wang Zhichao Liu Xiangna Feng Xiaomei (Physics Department)
Abstract:Whem the nonradiative recombination of carriers and the quantum size effect in the a-Si:H/a-SiN_x:H superlattice films have are studied by photoacoustic techonlogy,it is discovered that the nonradiative recombination of carriers is related to the defects in the superlattice film and the optical gap of the film increases with the decrease of width of the well.
Keywords:amorphous semiconductor superlattice  photoacoustic spectrum
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