| 光电负阻晶体管PNEGIT的研制 |
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| 引用本文： | 李树荣 郑云光. 光电负阻晶体管PNEGIT的研制[J]. 天津大学学报(自然科学与工程技术版), 1998, 31(5): 545-550 |
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| 作者姓名： | 李树荣 郑云光 |
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| 作者单位： | 天津大学电子信息工程学院 |
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| 摘 要： | 考虑到负阻晶体管ＮＥＧＩＴ的特点，设计和制造了在光照度１００ｌｘ和１０００ｌｘ的白炽灯光照射下输出光电流下分别达到了０．６ｍＡ和１８ｍＡ的光电负阻晶体管ＰＮＥＧＩＴ并测量了其特性。
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| 关 键 词： | 负阻晶体管 光电负阻晶体管 光电晶体管 |
THE FABRICATION OF THE PHOTO NEGATIVE IMPEDANCE TRANSISTOR PNEGIT |
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| Li Shurong Zheng Yunguang Guo Weilian. THE FABRICATION OF THE PHOTO NEGATIVE IMPEDANCE TRANSISTOR PNEGIT[J]. Journal of Tianjin University(Science and Technology), 1998, 31(5): 545-550 |
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| Authors: | Li Shurong Zheng Yunguang Guo Weilian |
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| Abstract: | In view of the features of the negative impedance transistor NEGIT,the photo negative impedance transistor PNEGIT has been designed and fabricated.Its characteristics have been measured.Under the illuminating conditions of a tungsten filament lamp with the light intensity of illumination of 100 lx and 1 000 lx,the output current is up to 0.6 mA and 18 mA respectively. |
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| Keywords: | negative impedance transistor photo negative impedance transistor (PNEGIT) photo transistor |
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