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多层有耗介质中的三维闭式格林函数及其应用
引用本文:李富华,李征帆.多层有耗介质中的三维闭式格林函数及其应用[J].上海交通大学学报,2003,37(3):345-348.
作者姓名:李富华  李征帆
作者单位:上海交通大学电子工程系,上海,200030
摘    要:提出了一种复数拟合非单调函数的基函数,利用傅里叶变换和复数拟合导出了包含有耗介质的三维闭式近似格林函数。通过格林函数实部和虚部的误差比较以及硅衬底螺旋电感的建模实例,证明了复数拟合的近似格林函数在电容参数提取中是精确和有效的。

关 键 词:三维闭式格林函数  硅衬底集成电路  拟合
文章编号:1006-2467(2003)03-0345-04
修稿时间:2002年3月6日

Three-Dimensional Closed-Form Green's Function for Multilayered Lossy Dielectric Medium and Its Application
LI Fu hua,LI Zheng fan.Three-Dimensional Closed-Form Green''s Function for Multilayered Lossy Dielectric Medium and Its Application[J].Journal of Shanghai Jiaotong University,2003,37(3):345-348.
Authors:LI Fu hua  LI Zheng fan
Abstract:A novel basis function was presented to fit the oscillatory function, and an approximated three dimensional closed form Green's function was derived for the multilayered lossy dielectric by means of Fourier transforms and complex fitting. The complex fitting approximate Green's function was proved to be accurate and efficient in the parameters extraction of capacitance by comparing the relative error of real part and imaginary part of Green's function in spectral domain respectively, as well as the modeling example of spiral inductor on silicon substrate.
Keywords:D closed  form Green's function  silicon substrate integrated circuits  fitting
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