| n型掺杂GaAs中电子与空穴的超快弛豫特性 |
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| 引用本文： | 张海潮,黄淳.n型掺杂GaAs中电子与空穴的超快弛豫特性[J].中山大学学报(自然科学版),1999,38(6):21-25. |
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| 作者姓名： | 张海潮 黄淳 |
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| 基金项目： | 国家自然科学基金! ( 696760 1 5 )资助项目，广东省自然科学基金! ( 1 9874 0 82 )资助项目 |
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| 摘 要： | 研究了n型重掺杂GaAs中的光生电子与空穴的超快弛豫特性.在n型重掺杂情况下,由于费米面已进入导带之中,抑制了费米面附近光激发电子的弛豫过程对泵浦探测信号的贡献,而突出了空穴弛豫在饱和吸收谱中的地位.理论计算表明空穴通过吸收光声子在～300fs时间内达到与晶格热平衡,并由此所导出的材料光学形变势常数d0=31eV.计算值与实验测量结果相符合.
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| 关 键 词： | 飞秒激光光谱学 n型重掺杂GaAs 空穴光学声子散射 |
Ultrafast Dynamics of Electrons and Holes in Highly n-doped GaAs |
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| ZHANG Hai chaoState Key Laboratory of Ultrafast Laser Spectroscopy,Zhongshan University,Guangzhou ,China,HUANG Chun,WEN Jin hui,LAI Tian shu,LIN Wei zhu.Ultrafast Dynamics of Electrons and Holes in Highly n-doped GaAs[J].Acta Scientiarum Naturalium Universitatis Sunyatseni,1999,38(6):21-25. |
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| Authors: | ZHANG Hai chaoState Key Laboratory of Ultrafast Laser Spectroscopy Zhongshan University Guangzhou China HUANG Chun WEN Jin hui LAI Tian shu LIN Wei zhu |
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| Institution: | ZHANG Hai chaoState Key Laboratory of Ultrafast Laser Spectroscopy,Zhongshan University,Guangzhou 510275,China,HUANG Chun,WEN Jin hui,LAI Tian shu,LIN Wei zhu |
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| Abstract: | The ultrafast dynamics of photoexcited electrons and holes in highly n doped GaAs are studied theoretically and experimentally. The contributions of the electrons to the absorption saturation signal are reduced due to the screening of the electron Fermi distribution in the conduction band of n GaAs. The effects of the holes are then enhanced. A heavy hole optical phonon scattering time of 303 fs is calculated and an optical deformation potential d 0=31 eV is deduced. The calculated values are in consistent with those measured in the experiments. |
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| Keywords: | femtosecond spectroscopy n GaAs hole phonon scattering |
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