一种高性能的BiCMOS带隙基准电压源

提出了一种新颖的利用负反馈环路以及RC滤波器提高电源抑制比的高精密CMOS带隙基准电压源．采用上海贝岭的1．2μm BiCMOS工艺进行设计和仿真，spectre模拟表明该电路具有较高的精度和稳定性，带隙基准的输出电压为1．254V，在2．7V-5．5V电源电压范围内基准随输人电压的最大偏移为0．012mV，基准的最大静态电流约为11．27μA；当温度-40℃-120℃范围内，基准温度系数为1mV；在电源电压为3．6V时，基准的总电流约为10．6μA，功耗约为38．16μW；并且基准在低频时具有100dB以上的电源电压抑制比（PSRR），基准的输出启动时间约为39μs．

Super Performance BiCMOS Band-Gap Voltage Reference

In this paper, a novel high precision CMOS bandgap voltage reference which uses a negative back circuit and a RC filter to enhance the PSRR is proposed. Using 1.2 μm BiCMOS process of Beiling, Shanghai, this bandgap voltage reference was designed and simulated. Cadence Spectre simulation results show that this circuit has higher precision and stability, and the output of the bandgap voltage is 1. 254 V. The greatest skew of reference voltage to input voltage is 0.012 mV in the power supply range from 2.7 V to 5.5 V, and the maximum static current of reference is 11.27 μA ; the greatest skew of reference voltage to temperature is about 1 mV in the range of -40 ℃ - 120 ℃ ; the total current of the bandgap reference is about 10.6 μA with the power dissipation about 38.16 μW at 3.6 V power supply. This bandgap reference also has higher than 100 dB PSRR at low frequency, and the start up time of output is about 39 μS.