长余辉发光材料Zn_2SiO_4:Dy~(3+)的制备及发光性能

以Zn2SiO4为基质，用高温固相法（ss），sol-gel法（sg）制备得到Zn2SiO4：Dy^3＋长余辉发光材料，该发光材料的制备及长余辉发光性能至今尚未见到文献报道．由该发光材料的激发谱发现，其在紫外的235-350nm范围有吸收，其发射光谱表明，在紫光（378nm，393nm）、橙光（595nm）、红光（691nm）部位有发射峰．通过对比掺杂与未掺杂样品发射光谱，说明样品发光是由基质Zn2SiO4产生的，Dy^3＋的掺杂只是使材料形成了陷阱能级进而发出长余辉，还阐述了Zn2SiO4：Dy^3＋的可能发光机理．

Preparation and luminescent property of long afterglow material Zn2 SiO4: Dy3+

In this paper, using Zn2SiO4 as the host material doped Dy3+ , the long afterglow material Zn2SiO4:Dy3 + has been prepared by high temperature solid state method and sol - gel method. The preparation and long afterglow luminescent property of this luminescent material hasn't been reported in literature, so far. The results showed that Zn2SiO4: Dy3+ can be excited at the range of 230 ～350nm, and emited lights in violet area (378nm, 393nm),orange light (595nm), and red light (691nm) zones. In comparison with the emission spectra of doped and undoped samples, it has been found that the luminescent peak positions of the doped sample can be assigned to the matrix Zn2SiO4, and doped Dy3+ in sample just leads to the formation of trapping levels and then the doped sample emits long afterglow. The possible luminescent mechanism of Zn2 SiO4: Dy3 + is also discussed in this paper.