N型GaAs少子扩散长度的温度特性

根据 Sturge 和Hwang 的实验数据,通过计算机拟合、内插方法获得了所需能量范围内 13种温度的 GaAs 吸收谱。在此基础上,采用表面光伏方法在 21～320 K 温度范围内测试了不同掺杂浓度的 N型 GaAs样品的少子扩散长度。得到了一组反映少子扩散长度温度特性的实验曲线,并由实验曲线得到可用于计算不同温度下少子扩散长度Lp(T)的经验公式。

Temperature Property of Minority-Carrier Diffusion Length in N-type GaAs

The optical absorption spectra of GaAs at thirteen different temperatures in the required temperature and energy ranges have been obtained by computer fitting and interpolating methods according to Sturge's and Hwang's experimental data. On the basis of the above work, the minority-carrier diffusion length in N-tpye GaAs single crystal samples with different electron concentration in the temperature range 21- 320 K have been measured by the surface photovol tage method. A set of experimental curves described temperature dependence of diffusionlength and an empirical formul which can be used to calculate minority-carrier diffusion lengthLP(T) at the different temperature were obtained.