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制备GaN基材料的数值模拟研究进展
引用本文:丁祥,许玲,高文峰,刘滔,林文贤. 制备GaN基材料的数值模拟研究进展[J]. 云南师范大学学报(自然科学版), 2012, 32(1): 25-30
作者姓名:丁祥  许玲  高文峰  刘滔  林文贤
作者单位:云南师范大学太阳能研究所,教育部可再生能源材料先进技术与制备重点实验室,云南昆明650092
基金项目:国家自然科学基金资助项目(50879074,11072211);高等学校博士学科点专项科研基金(20105303110001);云南省应用基础研究计划(2011FN017);西部高原地区太阳能有效利用及可持续开发研究教育部创新团队发展计划资助项目
摘    要:综述了紫外探测器的实际应用,特别介绍了紫外预警系统的作用原理;详细介绍了GaN基材料及其生长方法;对MOCVD法制备GaN基材料的过程做了详细描述,特别介绍了国内外MOCVD系统制备GaN基材料的数值模拟方法。

关 键 词:紫外探测器  GaN  金属有机物化学气相淀积  数值模拟

Research Progress in the Numerical Simulation to the Manufacturing of GaN-based Materials
DING Xiang , XU Ling , GAO Wen-feng , LIU Tao , LIN Wen-xian. Research Progress in the Numerical Simulation to the Manufacturing of GaN-based Materials[J]. Journal of Yunnan Normal University (Natural Sciences Edition), 2012, 32(1): 25-30
Authors:DING Xiang    XU Ling    GAO Wen-feng    LIU Tao    LIN Wen-xian
Affiliation:(Solar Energy Research Institute,Yunnan Normal University,Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials of the Ministry of Education of China,Kunming 650092,China)
Abstract:This paper reviews the practical application of ultraviolet photodetectors,especially introduces the working principle of ultraviolet warning systems.The GaN-based materials and their growth and doping methods as well as the process to manufacture GaN-based materials by the MOCVD method are described in detail.In particular,the numerical simulation methods to simulate the manufacturing of GaN-based materials by MOCVD systems in China and overseas are introduced.
Keywords:Ultraviolet Photodetectors  GaN  MOCVD  Numerical Simulation
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