| Pt在Ni(Pt)-Si-O固相反应中的影响 |
| |
| 引用本文： | 任卫,CHI Dongzhi. Pt在Ni(Pt)-Si-O固相反应中的影响[J]. 复旦学报(自然科学版), 2007, 46(3): 318-323 |
| |
| 作者姓名： | 任卫 CHI Dongzhi |
| |
| 作者单位： | 1. 上海理工大学,理学院,上海,200093
2. Institute of Materials Research and Engineering,Singapore 117602 |
| |
| 基金项目： | supported by Scholarship of National University of Singapore |
| |
| 摘 要： | 深亚微米尺度(90 nm)下,对在金属Ni膜中加入微量Pt,再经过高温退火形成NiSi.对该固相反应的反应序列进行了研究.研究发现Ni2Si-to-NiSi转变温度由300℃提高到350℃;NiSi-to-NiSi2转变温度由640℃提高到775℃;而且,NiSi薄膜的形貌在750℃才开始发生Agglomeration现象.
|
| 关 键 词： | 镍硅化物 固相反应 快速热处理 扩散 二次离子质谱 |
| 文章编号： | 0427-7104（2007）03-0318-06 |
| 修稿时间： | 2007-01-24 |
Effects of Pt on Ni(Pt)-Si Silicidation |
| |
| REN Wei,CHI Dong-zhi. Effects of Pt on Ni(Pt)-Si Silicidation[J]. Journal of Fudan University(Natural Science), 2007, 46(3): 318-323 |
| |
| Authors: | REN Wei CHI Dong-zhi |
| |
| Affiliation: | 1. College of Science, University of Shanghai for Science and Technology, Shanghai 200093, China ; 2. Institute of Materials Research and Engineering, Singapore 117602 |
| |
| Abstract: | Within a sub 90 nm technology node of IC manufacturing,NiSi is a potential contact material on source/drain and gate regions of a transistor.NiSi formation with addition of minor Pt was studied.The reaction sequence was investigated from Ni-rich to Si-rich phases.It was found that after adding Pt into the system,the transition temperature of Ni2Si-to-NiSi was pulled up from 300 to 350 ℃; the transition temperature of NiSi -to-NiSi2 up from 640 to 775 ℃; while,the onset temperature of film agglomeration was delayed to 750 ℃. |
| |
| Keywords: | nickel silicide solid-state reaction rapid thermal processing diffusion SIMS |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
