| 离子注入过程中金属间化合物的生长模型 |
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| 引用本文： | 朱慧珑.离子注入过程中金属间化合物的生长模型[J].北京师范大学学报(自然科学版),1990(3):60-64. |
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| 作者姓名： | 朱慧珑 |
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| 作者单位： | 低能核物理研究所 |
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| 摘 要： | 给出了在离子注入过程中金属间化合物生长的一个数学模型。在准静态近似下,利用分区处理和引入快、慢变量的方法,给出了该模型的近似解。得到了生长速率与微缺密度、注量率、热发射率之间的定量关系。
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| 关 键 词： | 离子注入 金属间化合物 生长模型 |
A GROWTH MODEL OF METALLIC COMPOUNDS DURING ION IMPLANTATION |
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| Zhu Huilong.A GROWTH MODEL OF METALLIC COMPOUNDS DURING ION IMPLANTATION[J].Journal of Beijing Normal University(Natural Science),1990(3):60-64. |
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| Authors: | Zhu Huilong |
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| Institution: | Institute of Low Energy Nuclear Physics |
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| Abstract: | A growth model of metallic compounds during ion implanta- tion is developed and the model is solved approximately by deviding the irradiated area into resonably small ones. The growth rate of the metallic compounds, as afunction of sink-densities, dose-rate and thermal emission- rates, is obtained. |
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| Keywords: | ion implantation metallic compounds growth model |
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