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New method to grow preferentially-oriented 4H-Sic films on Si substrate |
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| Authors: | Zhengping Fu Beifang Yang Ruchuan Liu Pengxian Zhang Yaozhong Ruan |
| Institution: | (1) Department of Materials Science and Engineering, University of Science and Technology of China, 230026 Hefei, China;(2) State Key Laboratory of Si Materials, Zhejiang University, 310027 Hangzhou, China;(3) State Key Laboratory of Surface Physics, Fudan University, 200433 Shanghai, China;(4) Yunnan Polytechnic University, 650051 Kunming, China |
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