| 半绝缘砷化镓表面光伏谱的三区分析 |
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| 引用本文： | 王松柏. 半绝缘砷化镓表面光伏谱的三区分析[J]. 江西科学, 2005, 23(5): 548-551 |
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| 作者姓名： | 王松柏 |
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| 作者单位： | 福州大学物理与信息工程学院,福建,福州,350002 |
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| 摘 要： | 采用低温（21K-300K）稳态表面光伏实验方法，对腐蚀前后的半绝缘砷化镓（Si—GaAs）样品进行了大量的实验测量，发现其表面光伏谱可分为三个区域，并对三个区域的成因进行了合理的物理分析。
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| 关 键 词： | 半绝缘GaAs 表面光伏谱 三个区域 |
| 文章编号： | 1001-3679(2005)05-0548-04 |
| 收稿时间： | 2005-04-17 |
| 修稿时间： | 2005-06-29 |
The Analyzing of Three Surface Photovoltage Spectrum Regions of Semi- insulating GaAs |
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| WANG Song-bai. The Analyzing of Three Surface Photovoltage Spectrum Regions of Semi- insulating GaAs[J]. Jiangxi Science, 2005, 23(5): 548-551 |
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| Authors: | WANG Song-bai |
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| Affiliation: | Department of Elee. , Fuzhou Univ, Fujian Fuzhou 350002 PRC |
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| Abstract: | A lot of experimental measurements have been performed on the undoped semi - insulating CaAs sample before and after etching. It is found that the surface photovoltage spectrum of semi - insulating GaAs can be divided into three regions. Furthermore, the theoretical causes of forming three regions is analyzed and discussed. |
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| Keywords: | Semi - insulating GaAs Surface photovoltage spectrum Three regions |
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