高电流密度交流电下金互连线的失效行为

通过对200nm厚,2μm宽的金互连线施加高电流密度交流电,研究该互连线的失效行为.通过解析金互连线在交流电作用下失效熔化过程的温度场模型,得到了高电流密度下的金线失效熔化过程温度场的解析解.实验数据与理论计算值的对比表明,在高电流密度交流电加载下,由于金互连线的局部过热,导致其中间熔断而造成失效,而不是由热疲劳导致的损伤.

Failure Behavior of Au Interconnects Under a High Density of Alternating Current

The failure behavior of Au interconnects, 2 μm wide and 200 nm thick, at high-density alternating current was investigated. Analyzing the temperature field model of the failure melting process of Au interconnects under the action of alternating current, an analytic solution to the temperature field at high current density was given. The comparison between experimental data and theoretically calculated values revealed that under the high current density AC loading the Au interconnects will fuse and then fail, which is due to the local overheating rather than the thermal fatigue-induced damage.