Undoped semi-insulating indium phosphide (InP) and its applications

During the past several years, the research and de-velopment of InP material has made great progress due to serving as the substrate for most optoelectronic devices operating at the communications wavelength of 1.31 and 1.55 mm. At present, InP has become an important semi-conductor material together with Si and GaAs. When compared to GaAs, InP has higher electron velocity, higher radiation hardness and better heat-conducting property. The advantage of InP crystal material allows higher f…

Undoped semi-insulating indium phosphide (InP) and its applications

During the past several years, the research and development of InP material has made great progress due to serving as the substrate for most optoelectronic devices operating at the communications wavelength of 1.31 and 1.55 (m. At present, InP has become an important semiconductor material together with Si and GaAs. When compared to GaAs, InP has higher electron velocity, higher radiation hardness and better heat-conducting property. The advantage of InP crystal material allows higher frequency operation and lower power requirements. Therefore, InPis widely being used for the manufacture of microwave devices, high-frequency devices and optoelectronic integrated circuits (OEICs) which are indispensable for wireless technology, satellite communications[1-3]. Although n-type and p-type InP can meet actual needs, semi-insulating InP substrates remain to be improved due to their poor uniformity and consistency. For this reason, several possible approaches have been reported to the preparation of SI InP by wafer annealing under different conditions[4-9].