| GIC4117 2×1.7MV串列加速器高能注入靶室的改进 |
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| 引用本文： | 王广甫,董平.GIC4117 2×1.7MV串列加速器高能注入靶室的改进[J].北京师范大学学报(自然科学版),2002,38(5):628-631. |
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| 作者姓名： | 王广甫 董平 |
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| 作者单位： | 北京师范大学分析测试中心,100875,北京 |
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| 基金项目： | 航天部九院横向项目;; |
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| 摘 要： | 通过更换丝杠和更新电机控制系统增大了靶盘纵向扫描范围,解决了扫描过程中纵向电机经常停转问题,并使靶室可装载10 cm(4 in)片子;通过隔离外界干扰电信号、精确控制扫描面积和对二次电子抑制电极的改进使注量测量误差达到了实验要求.
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| 关 键 词： | 高能离子注入靶室 双机械扫描 10 cm(4 in) Si片 注量控制 |
| 修稿时间： | 2002年4月9日 |
THE IMPROVEMENTS OF THE MeV ION IMPLANTATION CHAMBER OF THE GIC4117 2×1.7MV ION BEAM ANALYSIS FACILITIES IN BNU |
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| Wang Guangfu,Dong Ping.THE IMPROVEMENTS OF THE MeV ION IMPLANTATION CHAMBER OF THE GIC4117 2×1.7MV ION BEAM ANALYSIS FACILITIES IN BNU[J].Journal of Beijing Normal University(Natural Science),2002,38(5):628-631. |
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| Authors: | Wang Guangfu Dong Ping |
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| Abstract: | The MeV ion implantation chamber facilities are modified to load 10 cm (4 in) wafers by replacing the vertical 6 cm long non linear lead screw and its control system with a 12 cm long equal pitch lead screw and a velocity control system. The problem of the large error in ion dose measurement is solved by the insulation of outer electrical signal, the accurate control of the scanning area and the improvement of the secondary electrons suppression electrode. |
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| Keywords: | MeV ion implantation chamber double mechanical scan system 10 cm(4 in) wafers dose control |
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