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| ZnO压敏电阻器中的电容弥散 | |
| 引用本文： | 唐大海,庄严,周方桥,陈志雄. ZnO压敏电阻器中的电容弥散[J]. 华中科技大学学报(自然科学版), 2003, 31(12): 44-47 |
| 作者姓名： | 唐大海 庄严 周方桥 陈志雄 |
| 作者单位： | 1. 深圳京柏医疗设备有限公司 2. 广州新日电子有限公司 3. 广州大学物理系 |
| 基金项目： | 广州市科技局 ( 2 0 0 2Z2 D0 0 1 1 )，广州市科技计划资助项目 ( 2 0 0 2JI C0 1 91 ) |
| 摘 要： | 基于ZnO压敏电阻器的电子态特征，界面肖特基势垒不仅对其导电性能，而且对其介电性能也有决定性的影响．分析了三种可能导致电容弥散现象的机制，它们都与界面势垒的性状密切相关，给出的一些估算结果，与实验所得规律和数据基本符合．依据有效媒质理论的分析，认为不一致的晶界势垒高度是导致低频端的电容量随频率降低反常地升高的原因之一． |
| 关 键 词： | ZnO压敏电阻器 电容弥散 肖特基势垒 不均匀系统 |
| 文章编号： | 1671-4512(2003)12-0044-04 |
| 修稿时间： | 2003-03-28 |
Capacitance dispersion in ZnO varistors |
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| Tang Dahai Zhuang Yan Zhou Fangqiao Chen Zhixiong. Capacitance dispersion in ZnO varistors[J]. JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE, 2003, 31(12): 44-47 | |
| Authors: | Tang Dahai Zhuang Yan Zhou Fangqiao Chen Zhixiong |
| Affiliation: | Tang Dahai Zhuang Yan Zhou Fangqiao Chen Zhixiong |
| Abstract: | Based on the characteristics of the electronic state in ZnO varistors, Schottky barrier at interface influenced the conductance properties and the dielectric properties. Three possible mechanisms of capacitance dispersion related to the behavior of the interface barrier were analyzed. The estimated results were consistent with that of the experiment. According to the analysis of an effective-medium theory, different height of grain boundary barrier was considered as one of the reasons to conduce the capacitance to rise abnormally with decreasing frequency in low frequency region. |
| Keywords: | ZnO varistor capacitance dispersion Schottky barrier inhomogeneous system |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |