| a-SiO_xN_y薄膜的红光发射能级 |
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| 引用本文： | 石旺舟,余楚迎.a-SiO_xN_y薄膜的红光发射能级[J].汕头大学学报(自然科学版),2000,15(2):1-4. |
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| 作者姓名： | 石旺舟 余楚迎 |
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| 作者单位： | 汕头大学功能薄膜材料实验室!汕头，515063，汕头大学功能薄膜材料实验室!汕头，515063 |
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| 基金项目： | 苏州大学薄膜重点实验室资助 |
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| 摘 要： | 在ＰＥＣＶＤ法制备的ａ－ＳｉＯｘＮｙ薄膜中首次观察到分立能级的红光发射，采用荧光激发谱研究了发光能级与其它能级之间的相互关系，建立了产生光跃迁的能级模型．
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| 关 键 词： | a-SiO_xN_y薄膜 荧光发射 分立能级 |
Photoluminescent peaks from amorphous a-SiO_xN_y thin film |
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| Shi Wangzhou,Yu Chuying.Photoluminescent peaks from amorphous a-SiO_xN_y thin film[J].Journal of Shantou University(Natural Science Edition),2000,15(2):1-4. |
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| Authors: | Shi Wangzhou Yu Chuying |
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| Abstract: | Luminescence in red was observed for the first time in amorphous SiOxNy thin film deposited by PECVD method, with wave lengths at 733um, 738um, and 748um respectively. Fluorescent excitation spectra were measured to study the interrelationship between the photoluminescent energy levels and other energy levels. A model for optical transition is established. |
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| Keywords: | amorphous SiOxNy thin film fluorcescence discrete energy level |
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