| 半导体表面层势、场和电荷分布的一种简明解析表达 |
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| 引用本文： | 倪庆霄.半导体表面层势、场和电荷分布的一种简明解析表达[J].应用科学学报,1987,5(4):363-367. |
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| 作者姓名： | 倪庆霄 |
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| 作者单位： | 中国科学院上海技术物理研究所 |
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| 摘 要： | 半导体表面层偏离平带的状况有三种主要类型:积累层、耗尽层和反型层。关于表面层中场和势的分布,除了对耗尽层或弱反型层有熟知的"耗尽近似"简明解析表达外1,2],对表面层其他类型.
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| 收稿时间： | 1984-10-14 |
| 修稿时间： | 1985-01-18 |
BRIEF ANALYTICAL EXPRESSIONS ON PROFILES OF POTENTIAL,FIELD AND CHARGE DENSITY IN SURFACE SPACE CHARGE LAYERS OF SEMICONDUCTORS |
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| NI QINGXIAO.BRIEF ANALYTICAL EXPRESSIONS ON PROFILES OF POTENTIAL,FIELD AND CHARGE DENSITY IN SURFACE SPACE CHARGE LAYERS OF SEMICONDUCTORS[J].Journal of Applied Sciences,1987,5(4):363-367. |
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| Authors: | NI QINGXIAO |
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| Institution: | Shanghai Institute of Technical Physics, Academia Sinica |
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| Abstract: | This paper presents brief analytical expressions on profiles of potential, field and charge density in strong accumulation layers and strong inversion layers of semiconductor sarface layers. A characteristic length D is defined and its physical significance is discussed. |
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