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High sensitivity, fast speed and self-powered ultraviolet photodetectors based on ZnO micro/nanowire networks

Authors:	Zhiming Bai Xiaoqin Yan Xiang Chen Kun Zhao Pei Lin and Yue Zhang

Institution:	1.State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China 2.Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, China;State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100084, China;State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100085, China;State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100086, China;State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100087, China;State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100088, China

Abstract:	Ultraviolet (UV) photodetectors (PDs) based on ZnO micro/nanowire (MNW) networks with Pt contacts have been fabricated on glass substrates. The PDs exhibited a high photosensitivity (5×10³) for 365 nm UV light with a fast recovery time (0.2 s) at a reverse bias voltage of 2 V. The light induced modulation of Schottky barrier and MNW–MNW junction barrier was employed to account for the results. It was also observed that the PD had a high on–off ratio of 800 without external bias. The photovoltaic effect was proposed to explain the self-powered phenomenon.

Keywords:	nO Photodetector Network Sensitivity Response time
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