| GaAs中过渡金属深能级的量子化学计算 |
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| 引用本文： | 华文玉,王平立.GaAs中过渡金属深能级的量子化学计算[J].南京理工大学学报(自然科学版),1988(2). |
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| 作者姓名： | 华文玉 王平立 |
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| 作者单位： | 华东工学院应用物理系
(华文玉)，华东工学院六系(王平立) |
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| 摘 要： | 本文采用17个原子的原子蔟,用电荷-组态自洽的EHMO方法,计算了中性过渡金属原子Cr、Mn、Fe、Co、Ni在半导体GaAs中的深杂质态,所得杂质能级在能隙中的位置与实验结果较好地符合.
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| 关 键 词： | 砷化镓 集团模型 电荷 组态 过渡元素 能级 杂质 |
Quantum Clemistry Calculation on Deep Impurity Levels of Transitson Metals in GaAs |
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| Hua Wenyu,Wang Pingli.Quantum Clemistry Calculation on Deep Impurity Levels of Transitson Metals in GaAs[J].Journal of Nanjing University of Science and Technology(Nature Science),1988(2). |
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| Authors: | Hua Wenyu Wang Pingli |
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| Institution: | Hua Wenyu;Wang Pingli |
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| Abstract: | By using cluster model Consisting of 17 atoms, theSCCC (self-Consistent of Charge-Configuration) - EHMO method isused to calculate the deep impurity states of transition metals Cr. MnFe. Co and Ni in gallium arsenide. Tbe calculated positions of theenergy levels of the deep impurity in the gap are iu good agrementwith the experimental results. |
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| Keywords: | Gallium Arsenide Collective Model Electric Charge Configuration Transition Metal Energy Levels Impurities |
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